IndiumV3, Russie, Analysis, bibRecord, 000233

Plasma-assisted MBE of InGaN epilayers with atomically smooth and nanocolumnar morphology, grown on MOVPE GaN/Al2O3 templates

Identifieur interne : 000233 ( Russie/Analysis ); précédent : 000232; suivant : 000234

Plasma-assisted MBE of InGaN epilayers with atomically smooth and nanocolumnar morphology, grown on MOVPE GaN/Al2O3 templates

Auteurs : RBID : Pascal:07-0264049

Descripteurs français

Pascal (Inist)
- Traitement par plasma, Epitaxie jet moléculaire, Croissance cristalline en phase vapeur, Couche épitaxique, Méthode MOVPE, Epitaxie phase vapeur, Semiconducteur III-V, Composé III-V, Réaction dirigée, Propriété optique, Mécanisme croissance, Luminescence, Gallium nitrure, Indium nitrure, Aluminium oxyde, Nitrure, Condition opératoire, Répartition spatiale, Déplacement raie, Séparation phase, Photoluminescence, InGaN, GaN, Al2O3, InxGa1-xN, In, 8115H, 8110B, 8115K, 8105E.

English descriptors

KwdEn :
- Aluminium oxides, Crystal growth from vapors, Epitaxial layers, Gallium nitrides, Growth mechanism, III-V compound, III-V semiconductors, Indium nitrides, Luminescence, MOVPE method, Molecular beam epitaxy, Nitrides, Operating conditions, Optical properties, Phase separation, Photoluminescence, Plasma assisted processing, Spatial distribution, Spectral line shift, Template reaction, VPE.

Abstract

We report on the state-of-the-art parameters of GaN PA MBE layers grown on GaN/c-Al₂O₃ MOVPE templates and compare the structural and optical properties of In_xGa_1-xN layers grown under different conditions on top of the GaN-MBE/GaN-MOVPE/Al₂O₃ buffer structures. Atomically smooth and structurally perfect GaN and In_0.14Ga_0.86N epilayers have been achieved. The relatively low values of indium incorporation efficiency α_In in the InGaN layers grown on templates limits the maximum growth temperature and In-content that are necessary to achieve bright RT luminescence in the long-wavelength spectral range ( > 500 nm). It has been proposed that implementation of N-rich growth conditions resulting in the nanocolumnar growth morphology increases α_In and facilitates inhomogeneous spatial distribution of In in InGaN alloys, which play a crucial role in the red shift of the RT luminescence up to 510 nm and enhancement of its intensity.

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Pascal:07-0264049

Le document en format XML

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O<sub>3</sub>
 templates</title>
<author><name sortKey="Jmerik, V N" uniqKey="Jmerik V">V. N. Jmerik</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Ioffe Physico-Technical Institute, Polytekhnicheskaya Str. 26</s1>
<s2>St. Petersburg 194021</s2>
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<author><name sortKey="Mizerov, A M" uniqKey="Mizerov A">A. M. Mizerov</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Ioffe Physico-Technical Institute, Polytekhnicheskaya Str. 26</s1>
<s2>St. Petersburg 194021</s2>
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<author><name sortKey="Shubina, T V" uniqKey="Shubina T">T. V. Shubina</name>
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<s2>St. Petersburg 194021</s2>
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<author><name sortKey="Yagovkina, M" uniqKey="Yagovkina M">M. Yagovkina</name>
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<s2>St. Petersburg 194021</s2>
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<author><name sortKey="Listoshin, V B" uniqKey="Listoshin V">V. B. Listoshin</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Ioffe Physico-Technical Institute, Polytekhnicheskaya Str. 26</s1>
<s2>St. Petersburg 194021</s2>
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<author><name sortKey="Sitnikova, A A" uniqKey="Sitnikova A">A. A. Sitnikova</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Ioffe Physico-Technical Institute, Polytekhnicheskaya Str. 26</s1>
<s2>St. Petersburg 194021</s2>
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<sZ>1 aut.</sZ>
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<author><name sortKey="Ivanov, S V" uniqKey="Ivanov S">S. V. Ivanov</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Ioffe Physico-Technical Institute, Polytekhnicheskaya Str. 26</s1>
<s2>St. Petersburg 194021</s2>
<s3>RUS</s3>
<sZ>1 aut.</sZ>
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<author><name sortKey="Kim, M H" uniqKey="Kim M">M.-H. Kim</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Samsung Electro-Mechanics Co., Ltd, 314, Maetan 3 Dong, Yeongtong-Gu</s1>
<s2>Suwon, Gyunggi-Do 443-732</s2>
<s3>KOR</s3>
<sZ>8 aut.</sZ>
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</author>
<author><name sortKey="Koike, M" uniqKey="Koike M">M. Koike</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Samsung Electro-Mechanics Co., Ltd, 314, Maetan 3 Dong, Yeongtong-Gu</s1>
<s2>Suwon, Gyunggi-Do 443-732</s2>
<s3>KOR</s3>
<sZ>8 aut.</sZ>
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<sZ>10 aut.</sZ>
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</affiliation>
</author>
<author><name sortKey="Kim, B J" uniqKey="Kim B">B.-J. Kim</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Samsung Electro-Mechanics Co., Ltd, 314, Maetan 3 Dong, Yeongtong-Gu</s1>
<s2>Suwon, Gyunggi-Do 443-732</s2>
<s3>KOR</s3>
<sZ>8 aut.</sZ>
<sZ>9 aut.</sZ>
<sZ>10 aut.</sZ>
</inist:fA14>
<country>Corée du Sud</country>
<wicri:noRegion>Suwon, Gyunggi-Do 443-732</wicri:noRegion>
</affiliation>
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<publicationStmt><idno type="inist">07-0264049</idno>
<date when="2007">2007</date>
<idno type="stanalyst">PASCAL 07-0264049 INIST</idno>
<idno type="RBID">Pascal:07-0264049</idno>
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<seriesStmt><idno type="ISSN">0022-0248</idno>
<title level="j" type="abbreviated">J. cryst. growth</title>
<title level="j" type="main">Journal of crystal growth</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium oxides</term>
<term>Crystal growth from vapors</term>
<term>Epitaxial layers</term>
<term>Gallium nitrides</term>
<term>Growth mechanism</term>
<term>III-V compound</term>
<term>III-V semiconductors</term>
<term>Indium nitrides</term>
<term>Luminescence</term>
<term>MOVPE method</term>
<term>Molecular beam epitaxy</term>
<term>Nitrides</term>
<term>Operating conditions</term>
<term>Optical properties</term>
<term>Phase separation</term>
<term>Photoluminescence</term>
<term>Plasma assisted processing</term>
<term>Spatial distribution</term>
<term>Spectral line shift</term>
<term>Template reaction</term>
<term>VPE</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Traitement par plasma</term>
<term>Epitaxie jet moléculaire</term>
<term>Croissance cristalline en phase vapeur</term>
<term>Couche épitaxique</term>
<term>Méthode MOVPE</term>
<term>Epitaxie phase vapeur</term>
<term>Semiconducteur III-V</term>
<term>Composé III-V</term>
<term>Réaction dirigée</term>
<term>Propriété optique</term>
<term>Mécanisme croissance</term>
<term>Luminescence</term>
<term>Gallium nitrure</term>
<term>Indium nitrure</term>
<term>Aluminium oxyde</term>
<term>Nitrure</term>
<term>Condition opératoire</term>
<term>Répartition spatiale</term>
<term>Déplacement raie</term>
<term>Séparation phase</term>
<term>Photoluminescence</term>
<term>InGaN</term>
<term>GaN</term>
<term>Al2O3</term>
<term>InxGa1-xN</term>
<term>In</term>
<term>8115H</term>
<term>8110B</term>
<term>8115K</term>
<term>8105E</term>
</keywords>
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<front><div type="abstract" xml:lang="en">We report on the state-of-the-art parameters of GaN PA MBE layers grown on GaN/c-Al<sub>2</sub>
O<sub>3</sub>
 MOVPE templates and compare the structural and optical properties of In<sub>x</sub>
Ga<sub>1-x</sub>
N layers grown under different conditions on top of the GaN-MBE/GaN-MOVPE/Al<sub>2</sub>
O<sub>3</sub>
 buffer structures. Atomically smooth and structurally perfect GaN and In<sub>0.14</sub>
Ga<sub>0.86</sub>
N epilayers have been achieved. The relatively low values of indium incorporation efficiency α<sub>In</sub>
 in the InGaN layers grown on templates limits the maximum growth temperature and In-content that are necessary to achieve bright RT luminescence in the long-wavelength spectral range ( > 500 nm). It has been proposed that implementation of N-rich growth conditions resulting in the nanocolumnar growth morphology increases α<sub>In</sub>
 and facilitates inhomogeneous spatial distribution of In in InGaN alloys, which play a crucial role in the red shift of the RT luminescence up to 510 nm and enhancement of its intensity.</div>
</front>
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<fA08 i1="01" i2="1" l="ENG"><s1>Plasma-assisted MBE of InGaN epilayers with atomically smooth and nanocolumnar morphology, grown on MOVPE GaN/Al<sub>2</sub>
O<sub>3</sub>
 templates</s1>
</fA08>
<fA09 i1="01" i2="1" l="ENG"><s1>14th International Conference on Molecular Beam Epitaxy (MBE-XIV), 3-8 September 2006, Tokyo, Japan</s1>
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<fA11 i1="01" i2="1"><s1>JMERIK (V. N.)</s1>
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<fA11 i1="03" i2="1"><s1>SHUBINA (T. V.)</s1>
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<fA11 i1="05" i2="1"><s1>LISTOSHIN (V. B.)</s1>
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<fA11 i1="07" i2="1"><s1>IVANOV (S. V.)</s1>
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<fA11 i1="08" i2="1"><s1>KIM (M.-H.)</s1>
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<fA11 i1="09" i2="1"><s1>KOIKE (M.)</s1>
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<fA12 i1="01" i2="1"><s1>YOSHINO (J.)</s1>
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<fA12 i1="02" i2="1"><s1>AKINAGA (H.)</s1>
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<fA12 i1="03" i2="1"><s1>ASAHI (H.)</s1>
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<fA14 i1="01"><s1>Ioffe Physico-Technical Institute, Polytekhnicheskaya Str. 26</s1>
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<fA14 i1="02"><s1>Samsung Electro-Mechanics Co., Ltd, 314, Maetan 3 Dong, Yeongtong-Gu</s1>
<s2>Suwon, Gyunggi-Do 443-732</s2>
<s3>KOR</s3>
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<fA15 i1="01"><s1>Tokyo Institute of Technology</s1>
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<fA15 i1="03"><s1>Osaka University</s1>
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<fA18 i1="01" i2="1"><s1>Japan Society of Applied Physics</s1>
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<fC01 i1="01" l="ENG"><s0>We report on the state-of-the-art parameters of GaN PA MBE layers grown on GaN/c-Al<sub>2</sub>
O<sub>3</sub>
 MOVPE templates and compare the structural and optical properties of In<sub>x</sub>
Ga<sub>1-x</sub>
N layers grown under different conditions on top of the GaN-MBE/GaN-MOVPE/Al<sub>2</sub>
O<sub>3</sub>
 buffer structures. Atomically smooth and structurally perfect GaN and In<sub>0.14</sub>
Ga<sub>0.86</sub>
N epilayers have been achieved. The relatively low values of indium incorporation efficiency α<sub>In</sub>
 in the InGaN layers grown on templates limits the maximum growth temperature and In-content that are necessary to achieve bright RT luminescence in the long-wavelength spectral range ( > 500 nm). It has been proposed that implementation of N-rich growth conditions resulting in the nanocolumnar growth morphology increases α<sub>In</sub>
 and facilitates inhomogeneous spatial distribution of In in InGaN alloys, which play a crucial role in the red shift of the RT luminescence up to 510 nm and enhancement of its intensity.</s0>
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<fC03 i1="14" i2="3" l="FRE"><s0>Indium nitrure</s0>
<s2>NK</s2>
<s5>16</s5>
</fC03>
<fC03 i1="14" i2="3" l="ENG"><s0>Indium nitrides</s0>
<s2>NK</s2>
<s5>16</s5>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>Aluminium oxyde</s0>
<s2>NK</s2>
<s5>17</s5>
</fC03>
<fC03 i1="15" i2="3" l="ENG"><s0>Aluminium oxides</s0>
<s2>NK</s2>
<s5>17</s5>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>Nitrure</s0>
<s2>NA</s2>
<s5>18</s5>
</fC03>
<fC03 i1="16" i2="3" l="ENG"><s0>Nitrides</s0>
<s2>NA</s2>
<s5>18</s5>
</fC03>
<fC03 i1="17" i2="X" l="FRE"><s0>Condition opératoire</s0>
<s5>29</s5>
</fC03>
<fC03 i1="17" i2="X" l="ENG"><s0>Operating conditions</s0>
<s5>29</s5>
</fC03>
<fC03 i1="17" i2="X" l="SPA"><s0>Condición operatoria</s0>
<s5>29</s5>
</fC03>
<fC03 i1="18" i2="3" l="FRE"><s0>Répartition spatiale</s0>
<s5>30</s5>
</fC03>
<fC03 i1="18" i2="3" l="ENG"><s0>Spatial distribution</s0>
<s5>30</s5>
</fC03>
<fC03 i1="19" i2="3" l="FRE"><s0>Déplacement raie</s0>
<s5>31</s5>
</fC03>
<fC03 i1="19" i2="3" l="ENG"><s0>Spectral line shift</s0>
<s5>31</s5>
</fC03>
<fC03 i1="20" i2="3" l="FRE"><s0>Séparation phase</s0>
<s5>32</s5>
</fC03>
<fC03 i1="20" i2="3" l="ENG"><s0>Phase separation</s0>
<s5>32</s5>
</fC03>
<fC03 i1="21" i2="3" l="FRE"><s0>Photoluminescence</s0>
<s5>33</s5>
</fC03>
<fC03 i1="21" i2="3" l="ENG"><s0>Photoluminescence</s0>
<s5>33</s5>
</fC03>
<fC03 i1="22" i2="3" l="FRE"><s0>InGaN</s0>
<s4>INC</s4>
<s5>46</s5>
</fC03>
<fC03 i1="23" i2="3" l="FRE"><s0>GaN</s0>
<s4>INC</s4>
<s5>47</s5>
</fC03>
<fC03 i1="24" i2="3" l="FRE"><s0>Al2O3</s0>
<s4>INC</s4>
<s5>48</s5>
</fC03>
<fC03 i1="25" i2="3" l="FRE"><s0>InxGa1-xN</s0>
<s4>INC</s4>
<s5>49</s5>
</fC03>
<fC03 i1="26" i2="3" l="FRE"><s0>In</s0>
<s4>INC</s4>
<s5>50</s5>
</fC03>
<fC03 i1="27" i2="3" l="FRE"><s0>8115H</s0>
<s4>INC</s4>
<s5>71</s5>
</fC03>
<fC03 i1="28" i2="3" l="FRE"><s0>8110B</s0>
<s4>INC</s4>
<s5>72</s5>
</fC03>
<fC03 i1="29" i2="3" l="FRE"><s0>8115K</s0>
<s4>INC</s4>
<s5>73</s5>
</fC03>
<fC03 i1="30" i2="3" l="FRE"><s0>8105E</s0>
<s4>INC</s4>
<s5>74</s5>
</fC03>
<fN21><s1>176</s1>
</fN21>
</pA>
<pR><fA30 i1="01" i2="1" l="ENG"><s1>MBE-XIV: International Conference on Molecular Beam Epitaxy</s1>
<s2>14</s2>
<s3>Tokyo JPN</s3>
<s4>2006-09-03</s4>
</fA30>
</pR>
</standard>
</inist>
</record>

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   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
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   |texte=   Plasma-assisted MBE of InGaN epilayers with atomically smooth and nanocolumnar morphology, grown on MOVPE GaN/Al2O3 templates
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Plasma-assisted MBE of InGaN epilayers with atomically smooth and nanocolumnar morphology, grown on MOVPE GaN/Al2O3 templates

Plasma-assisted MBE of InGaN epilayers with atomically smooth and nanocolumnar morphology, grown on MOVPE GaN/Al2O3 templates

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